N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L05ATMA2

RS Stock No.:: 826-8998
Mfr. Part No.:: IPB80N06S4L05ATMA2
Brand:: Infineon

N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon IPB80N06S4L05ATMA2

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2960 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 20)

$2.716

(exc. GST)

$2.988

(inc. GST)

Units	Per unit	Per Pack*
20 - 240	$2.716	$54.32
260 +	$2.687	$53.74
*price indicative

RS Stock No.:: 826-8998
Mfr. Part No.:: IPB80N06S4L05ATMA2
Brand:: Infineon

Technical data sheets

Legislation and Compliance

RoHS Status: Exempt

Product Details

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	60 V
Series	OptiMOS T2
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	8.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	107 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Typical Gate Charge @ Vgs	83 nC @ 10 V
Number of Elements per Chip	1
Length	10mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	9.25mm
Height	4.4mm
Minimum Operating Temperature	-55 °C