N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 Infineon IPP320N20N3GXKSA1

RS Stock No.:: 823-5642
Mfr. Part No.:: IPP320N20N3GXKSA1
Brand:: Infineon

N-Channel MOSFET, 34 A, 200 V, 3-Pin TO-220 Infineon IPP320N20N3GXKSA1

This image is representative of the product range

28 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 2)

$5.285

(exc. GST)

$5.813

(inc. GST)

Units	Per unit	Per Pack*
2 - 12	$5.285	$10.57
14 - 24	$5.20	$10.40
26 +	$5.105	$10.21
*price indicative

RS Stock No.:: 823-5642
Mfr. Part No.:: IPP320N20N3GXKSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MY

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	34 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS 3
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	32 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	136 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.36mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	22 nC @ 10 V
Width	4.57mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	15.95mm