P-Channel MOSFET, 1.6 A, 30 V, 3-Pin SOT-23 Infineon BSS308PEH6327XTSA1
- RS Stock No.:
- 823-5500
- Mfr. Part No.:
- BSS308PEH6327XTSA1
- Brand:
- Infineon
On back order for despatch 16/09/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 50)
$0.585
(exc. GST)
$0.643
(inc. GST)
| Units | Per unit | Per Pack* |
| 50 - 700 | $0.585 | $29.25 |
| 750 - 1450 | $0.575 | $28.75 |
| 1500 + | $0.564 | $28.20 |
| *price indicative | ||
- RS Stock No.:
- 823-5500
- Mfr. Part No.:
- BSS308PEH6327XTSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.6 A |
| Maximum Drain Source Voltage | 30 V |
| Series | OptiMOS P |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.3mm |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V |
| Length | 2.9mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |