- RS Stock No.:
- 807-5881
- Mfr. Part No.:
- FQPF11N50CF
- Brand:
- onsemi
Discontinued product
- RS Stock No.:
- 807-5881
- Mfr. Part No.:
- FQPF11N50CF
- Brand:
- onsemi
Legislation and Compliance
Product Details
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 11 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-220F |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 550 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 48 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Typical Gate Charge @ Vgs | 43 nC @ 10 V |
Length | 10.36mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Width | 4.9mm |
Transistor Material | Si |
Series | QFET |
Height | 16.07mm |
Minimum Operating Temperature | -55 °C |
Related links
- Hammers
- Connector Tool Kits
- RS PRO Straight IEC C13 Socket to Straight IEC C14 Plug Power Cord, 2m
- RS PRO Zinc Alloy 5-way Control Cabinet Key
- Single Parameter(s) Chlorine Test Strips, max. measurement 200ppm...
- Draw Wires & Fish Tapes
- N-Channel MOSFET 500 V, 3-Pin TO-247AC Vishay IRFP448PBF
- N-Channel MOSFET 500 V, 3-Pin TO-220AB Vishay IRFB11N50APBF