N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3
- RS Stock No.:
- 802-4461
- Mfr. Part No.:
- IXFQ60N50P3
- Brand:
- IXYS
6 In AU stock for next working day delivery
1 In Global stock for delivery within 5 working day(s)
9 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each
$15.72
(exc. GST)
$17.29
(inc. GST)
| Units | Per unit |
| 1 - 7 | $15.72 |
| 8 - 14 | $15.71 |
| 15 + | $15.18 |
- RS Stock No.:
- 802-4461
- Mfr. Part No.:
- IXFQ60N50P3
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-3P |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.9mm |
| Length | 15.8mm |
| Typical Gate Charge @ Vgs | 96 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Height | 20.3mm |
| Minimum Operating Temperature | -55 °C |