- RS Stock No.:
- 801-1409
- Mfr. Part No.:
- IXFK32N100Q3
- Brand:
- IXYS
On back order for despatch 31/01/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each
$51.25
(exc. GST)
$56.37
(inc. GST)
Units | Per unit |
1 - 6 | $51.25 |
7 - 12 | $50.99 |
13 + | $50.56 |
- RS Stock No.:
- 801-1409
- Mfr. Part No.:
- IXFK32N100Q3
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 32 A |
Maximum Drain Source Voltage | 1000 V |
Package Type | TO-264 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 320 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 6.5V |
Maximum Power Dissipation | 1.25 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Width | 5.13mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Length | 19.96mm |
Typical Gate Charge @ Vgs | 195 nC @ 10 V |
Number of Elements per Chip | 1 |
Series | HiperFET, Q3-Class |
Minimum Operating Temperature | -55 °C |
Height | 26.16mm |
Related links
- N-Channel MOSFET 200 V, 3-Pin TO-247 IXYS IXFH120N20P
- N-Channel MOSFET 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3
- N-Channel MOSFET 600 V, 3-Pin TO-264 IXYS IXFK48N60Q3
- N-Channel MOSFET 1000 V, 3-Pin TO-3PN onsemi FQA8N100C
- N-Channel MOSFET 560 V, 3-Pin TO-247 Infineon SPW32N50C3FKSA1
- N-Channel MOSFET 1000 V, 3-Pin DPAK Taiwan Semi TSM2N100CP ROG
- N-Channel MOSFET 500 V, 3-Pin ISOPLUS264 IXYS IXFL100N50P
- N-Channel MOSFET 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3