N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

Discontinued product

$11.455

Each (In a Pack of 2)

RS Stock No.: 827-6182

Technical data sheets

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MOSFET Transistors, Toshiba

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	10.16mm
Width	4.45mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Height	15.1mm
Series	DTMOSIV