ECH8601M-TL-H Dual N-Channel MOSFET Transistor, 8 A, 24 V, 8-Pin ECH ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 8 A
Maximum Drain Source Voltage 24 V
Package Type ECH
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 23 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 1.5 W
Transistor Configuration Common Drain
Maximum Gate Source Voltage -12 V, +12 V
Number of Elements per Chip 2
Width 2.3mm
Height 0.9mm
Typical Gate Charge @ Vgs 7.5 nC @ 4.5 V
Length 2.9mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Discontinued product