N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 Infineon BSS159NH6327XTSA2

RS Stock No.:: 753-2841
Mfr. Part No.:: BSS159NH6327XTSA2
Brand:: Infineon

N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 Infineon BSS159NH6327XTSA2

On back order for despatch 07/02/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Pack of 25)

$0.999

(exc. GST)

$1.099

(inc. GST)

Units	Per unit	Per Pack*
25 - 100	$0.999	$24.975
125 - 475	$0.96	$24.00
500 - 1225	$0.92	$23.00
1250 +	$0.899	$22.475
*price indicative

RS Stock No.:: 753-2841
Mfr. Part No.:: BSS159NH6327XTSA2
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon SIPMOS® N-Channel MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	230 mA
Maximum Drain Source Voltage	60 V
Series	SIPMOS
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	8 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	2.4V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	360 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	1.3mm
Length	2.9mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	1.4 nC @ 5 V
Height	1mm
Minimum Operating Temperature	-55 °C