N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-220AB Infineon AUIRL3705N
- RS Stock No.:
- 748-1894
- Mfr. Part No.:
- AUIRL3705N
- Brand:
- Infineon
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each
$4.74
(exc. GST)
$5.21
(inc. GST)
| Units | Per unit |
| 1 - 24 | $4.74 |
| 25 - 99 | $4.60 |
| 100 - 249 | $4.46 |
| 250 - 499 | $4.33 |
| 500 + | $4.20 |
- RS Stock No.:
- 748-1894
- Mfr. Part No.:
- AUIRL3705N
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 89 A |
| Maximum Drain Source Voltage | 55 V |
| Series | HEXFET |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 18 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 170 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 98 nC @ 5 V |
| Length | 10.66mm |
| Width | 4.82mm |
| Transistor Material | Si |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |