N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRFB4020PBF

RS Stock No.:: 688-6939
Mfr. Part No.:: IRFB4020PBF
Brand:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRFB4020PBF

This image is representative of the product range

40 In Global stock for delivery within 5 working day(s)

Added

Price (ex. GST) Each (In a Pack of 5)

$3.258

(exc. GST)

$3.584

(inc. GST)

Units	Per unit	Per Pack*
5 - 10	$3.258	$16.29
15 - 20	$3.176	$15.88
25 +	$3.128	$15.64
*price indicative

RS Stock No.:: 688-6939
Mfr. Part No.:: IRFB4020PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.9V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.82mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	18 nC @ 10 V
Length	10.66mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Series	HEXFET
Height	9.02mm