- RS Stock No.:
- 688-6829
- Mfr. Part No.:
- IRF3205ZPBF
- Brand:
- Infineon
Stock check temporarily unavailable - call for stock availability
Added
Price (ex. GST) Each (In a Pack of 2)
$3.10
(exc. GST)
$3.41
(inc. GST)
Units | Per unit | Per Pack* |
2 - 12 | $3.10 | $6.20 |
14 + | $3.05 | $6.10 |
*price indicative |
- RS Stock No.:
- 688-6829
- Mfr. Part No.:
- IRF3205ZPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 110 A |
Maximum Drain Source Voltage | 55 V |
Series | HEXFET |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 7 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 170 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 4.69mm |
Length | 10.54mm |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 76 nC @ 10 V |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Height | 8.77mm |
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