FQP27P06 P-Channel MOSFET, 27 A, 60 V QFET, 3-Pin TO-220AB ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 27 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 70 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -25 V, +25 V
Package Type TO-220AB
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 120 W
Minimum Operating Temperature -55 °C
Typical Turn-Off Delay Time 30 ns
Typical Input Capacitance @ Vds 1100 pF @ 25 V
Typical Gate Charge @ Vgs 33 nC @ 10 V
Series QFET
Maximum Operating Temperature +175 °C
Length 10.1mm
Dimensions 10.1 x 4.7 x 9.4mm
Width 4.7mm
Number of Elements per Chip 1
Transistor Material Si
Height 9.4mm
Typical Turn-On Delay Time 18 ns
45 : Next working day (AU stock)
1125 : 5 working days (Global stock)
Price (ex. GST) Each (In a Pack of 5)
$ 2.912
(exc. GST)
$ 3.203
(inc. GST)
units
Per unit
Per Pack*
5 - 20
$2.912
$14.56
25 - 95
$2.63
$13.15
100 - 245
$2.328
$11.64
250 - 495
$2.326
$11.63
500 +
$2.268
$11.34
*price indicative
Packaging Options:
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