FQP27P06 P-Channel MOSFET, 27 A, 60 V QFET, 3-Pin TO-220AB ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 27 A
Maximum Drain Source Voltage 60 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 70 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 120 W
Transistor Configuration Single
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Width 4.7mm
Minimum Operating Temperature -55 °C
Length 10.1mm
Typical Gate Charge @ Vgs 33 nC @ 10 V
Transistor Material Si
Maximum Operating Temperature +175 °C
Height 9.4mm
Series QFET
940 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 5)
$ 2.20
(exc. GST)
$ 2.42
(inc. GST)
units
Per unit
Per Pack*
5 +
$2.20
$11.00
*price indicative
Packaging Options:
Related Products
DirectFET® Power MOSFET, Infineon The DirectFET® power package ...
Description:
DirectFET® Power MOSFET, Infineon The DirectFET® power package is a surface-mount power MOSFET packaging technology DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints ...
N-Channel Power MOSFET 60V to 80V, Infineon The ...
Description:
N-Channel Power MOSFET 60V to 80V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages And form factors that can address almost any board layout and thermal design challenge. Across the ...
High-Speed Switching Low drain-source on-resistanceRDS(ON) = 1.05 Ω ...
Description:
High-Speed Switching Low drain-source on-resistanceRDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V).
Automotive Power MOSFET in a 5x6mm flat lead ...
Description:
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications. Small Footprint (5x6 mm)Compact ...