P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK onsemi FQD11P06TM

RS Stock No.:: 671-0949
Mfr. Part No.:: FQD11P06TM
Brand:: onsemi

P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK onsemi FQD11P06TM

55 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Pack of 5)

$1.716

(exc. GST)

$1.888

(inc. GST)

Units	Per unit	Per Pack*
5 - 620	$1.716	$8.58
625 - 1245	$1.688	$8.44
1250 +	$1.66	$8.30
*price indicative

RS Stock No.:: 671-0949
Mfr. Part No.:: FQD11P06TM
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	9.4 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	185 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	13 nC @ 10 V
Length	6.6mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	6.1mm
Transistor Material	Si
Height	2.3mm
Minimum Operating Temperature	-55 °C