IRLML2502PBF N-Channel MOSFET, 4.2 A, 20 V HEXFET, 3-Pin SOT-23 Infineon

  • RS Stock No. 610-6693
  • Mfr. Part No. IRLML2502PBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 4.2 A
Maximum Drain Source Voltage 20 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 45 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.2V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 1.25 W
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Number of Elements per Chip 1
Width 1.4mm
Height 1.02mm
Typical Gate Charge @ Vgs 8 nC @ 5 V
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Series HEXFET
Length 3.04mm
Transistor Material Si
Discontinued product