IRLU120NPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 3-Pin IPAK Infineon

  • RS Stock No. 543-1718
  • Mfr. Part No. IRLU120NPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 10 A
Maximum Drain Source Voltage 100 V
Package Type IPAK (TO-251)
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 185 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 48 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Width 2.3mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 20 nC @ 5 V
Length 6.6mm
Transistor Material Si
Series HEXFET
Maximum Operating Temperature +175 °C
Height 6.1mm
On back order for despatch 27/04/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Pack of 5)
$ 1.18
(exc. GST)
$ 1.30
(inc. GST)
units
Per unit
Per Pack*
5 - 20
$1.18
$5.90
25 - 95
$0.978
$4.89
100 - 245
$0.632
$3.16
250 - 495
$0.62
$3.10
500 +
$0.606
$3.03
*price indicative
Packaging Options:
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