IRLU120NPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 3-Pin IPAK Infineon
- RS Stock No. 543-1718
- Mfr. Part No. IRLU120NPBF
- Manufacturer Infineon
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
| Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 100 V |
| Maximum Drain Source Resistance | 185 mΩ |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Transistor Configuration | Single |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Category | Power MOSFET |
| Maximum Power Dissipation | 48 W |
| Length | 6.6mm |
| Dimensions | 6.6 x 2.3 x 6.1mm |
| Maximum Operating Temperature | +175 °C |
| Series | HEXFET |
| Height | 6.1mm |
| Width | 2.3mm |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Input Capacitance @ Vds | 440 pF@ 25 V |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V |
| Minimum Operating Temperature | -55 °C |
| Typical Turn-On Delay Time | 4 ns |
| Transistor Material | Si |
