P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC Infineon IRF7241PBF

RS Stock No.:: 543-1459
Mfr. Part No.:: IRF7241PBF
Brand:: Infineon

P-Channel MOSFET, 6.2 A, 40 V, 8-Pin SOIC Infineon IRF7241PBF

View all MOSFETs

Discontinued product

RS Stock No.:: 543-1459
Mfr. Part No.:: IRF7241PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRF7241 is the 40V single P-channel HEXFET power MOSFET in a SO-8 package.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.2 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	41 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	4mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	53 nC @ 10 V
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.5mm
Series	HEXFET