N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK Infineon IRF1404LPBF

RS Stock No.:: 543-0822
Mfr. Part No.:: IRF1404LPBF
Brand:: Infineon

N-Channel MOSFET, 162 A, 40 V, 3-Pin I2PAK Infineon IRF1404LPBF

On back order for despatch 30/01/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each

$4.41

(exc. GST)

$4.85

(inc. GST)

Units	Per unit
1 - 12	$4.41
13 - 24	$4.34
25 +	$4.27

RS Stock No.:: 543-0822
Mfr. Part No.:: IRF1404LPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	162 A
Maximum Drain Source Voltage	40 V
Package Type	I2PAK (TO-262)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	160 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Height	10.54mm
Minimum Operating Temperature	-55 °C