IRF5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 541-1736
  • Mfr. Part No. IRF5305PBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 31 A
Maximum Drain Source Voltage 55 V
Maximum Drain Source Resistance 60 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220AB
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 110 W
Dimensions 10.54 x 4.69 x 8.77mm
Typical Turn-Off Delay Time 39 ns
Typical Input Capacitance @ Vds 1200 pF@ 25 V
Typical Gate Charge @ Vgs 63 nC @ 10 V
Minimum Operating Temperature -55 °C
Typical Turn-On Delay Time 14 ns
Transistor Material Si
Number of Elements per Chip 1
Width 4.69mm
Length 10.54mm
Maximum Operating Temperature +175 °C
Series HEXFET
Height 8.77mm
63 : Next working day (AU stock)
2350 : 5 working days (Global stock)
Price (ex. GST) Each
$ 1.52
(exc. GST)
$ 1.67
(inc. GST)
units
Per unit
1 - 9
$1.52
10 - 49
$1.49
50 - 99
$1.48
100 - 249
$1.46
250 +
$1.45
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