IRF640NPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 541-0014
  • Mfr. Part No. IRF640NPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 18 A
Maximum Drain Source Voltage 200 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 150 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 150 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Transistor Material Si
Typical Gate Charge @ Vgs 67 nC @ 10 V
Maximum Operating Temperature +175 °C
Height 8.77mm
Series HEXFET
17 : Next working day (AU stock)
503 : 5 working days (Global stock)
Price (ex. GST) Each
$ 1.57
(exc. GST)
$ 1.73
(inc. GST)
units
Per unit
1 - 9
$1.57
10 - 49
$1.42
50 - 99
$1.39
100 - 249
$1.19
250 +
$1.17
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