N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1
- RS Stock No.:
- 462-2935
- Mfr. Part No.:
- BSP603S2LHUMA1
- Brand:
- Infineon
On back order for despatch 25/04/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 10)
$3.063
(exc. GST)
$3.369
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 990 | $3.063 | $30.63 |
| 1000 + | $3.011 | $30.11 |
| *price indicative | ||
- RS Stock No.:
- 462-2935
- Mfr. Part No.:
- BSP603S2LHUMA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.2 A |
| Maximum Drain Source Voltage | 55 V |
| Series | OptiMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 3.5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.6mm |