FDV304P P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 460 mA
Maximum Drain Source Voltage 25 V
Maximum Drain Source Resistance 1.1 Ω
Minimum Gate Threshold Voltage 0.65V
Maximum Gate Source Voltage +8 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 350 mW
Height 0.93mm
Maximum Operating Temperature +150 °C
Dimensions 2.92 x 1.3 x 0.93mm
Width 1.3mm
Number of Elements per Chip 1
Transistor Material Si
Typical Turn-On Delay Time 6 ns
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V
Typical Input Capacitance @ Vds 63 pF@ 10 V
Typical Turn-Off Delay Time 55 ns
Length 2.92mm
504 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 0.65
(exc. GST)
$ 0.71
(inc. GST)
units
Per unit
1 +
$0.65
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