N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK Vishay SIHD2N80AE-GE3
- RS Stock No.:
- 188-4982
- Mfr. Part No.:
- SIHD2N80AE-GE3
- Brand:
- Vishay
On back order for despatch 23/08/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 10)
$1.232
(exc. GST)
$1.355
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 490 | $1.232 | $12.32 |
| 500 - 990 | $1.216 | $12.16 |
| 1000 + | $1.183 | $11.83 |
| *price indicative | ||
- RS Stock No.:
- 188-4982
- Mfr. Part No.:
- SIHD2N80AE-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low effective capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.9 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 62.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Length | 6.73mm |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 2.25mm |