N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 onsemi 2N7000-D26Z
- RS Stock No.:
- 184-4881
- Mfr. Part No.:
- 2N7000-D26Z
- Brand:
- onsemi
2000 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 100)
$0.276
(exc. GST)
$0.304
(inc. GST)
| Units | Per unit | Per Pack* |
| 100 - 400 | $0.276 | $27.60 |
| 500 - 900 | $0.269 | $26.90 |
| 1000 - 1400 | $0.264 | $26.40 |
| 1500 - 1900 | $0.256 | $25.60 |
| 2000 + | $0.248 | $24.80 |
| *price indicative | ||
- RS Stock No.:
- 184-4881
- Mfr. Part No.:
- 2N7000-D26Z
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 400 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 4.19mm |
| Length | 5.2mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.5V |
| Height | 5.33mm |
| Minimum Operating Temperature | -55 °C |
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