N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 ON Semiconductor NTHL040N65S3F

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features
700 V @ TJ = 150
Ultra Low Gate Charge (Typ. Qg = 158 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF)
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 32 mΩ
Applications
Telecommunication
Cloud system
Industrial
Benefits
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
End Products
Telecom power
Server power
EV charger
Solar / UPS

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 65 A
Maximum Drain Source Voltage 650 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 40 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 446 W
Transistor Configuration Single
Maximum Gate Source Voltage ±30 V
Number of Elements per Chip 1
Height 20.82mm
Minimum Operating Temperature -55 °C
Width 4.82mm
Typical Gate Charge @ Vgs 158 nC @ 10 V
Length 15.87mm
Maximum Operating Temperature +150 °C
Forward Diode Voltage 1.3V
420 In stock for delivery within 7 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 30)
$ 11.16
(exc. GST)
$ 12.28
(inc. GST)
units
Per unit
Per Tube*
30 - 120
$11.16
$334.80
150 +
$10.53
$315.90
*price indicative
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