- RS Stock No.:
- 178-3899
- Mfr. Part No.:
- SiSS02DN-T1-GE3
- Brand:
- Vishay Siliconix
- RS Stock No.:
- 178-3899
- Mfr. Part No.:
- SiSS02DN-T1-GE3
- Brand:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- CN
Product Details
FEATURES
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 25 V |
Package Type | 1212 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.2V |
Maximum Power Dissipation | 65.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -12 V, +16 V |
Width | 3.15mm |
Typical Gate Charge @ Vgs | 55 nC @ 10 V |
Length | 3.15mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Series | TrenchFET |
Height | 1.07mm |
Forward Diode Voltage | 1.1V |
Minimum Operating Temperature | -55 °C |
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