2N7000-G N-Channel MOSFET, 200 mA, 60 (Minimum) V 2N7000, 3-Pin TO-92 Microchip Technology

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has drain-source resistance of 5ohms at a gate-source voltage of 10V. It has continuous drain current of 200mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 5.3 Ω
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage 30 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 1 W
Forward Diode Voltage 0.85V
Height 5.33
Number of Elements per Chip 1
Width 4.06mm
Length 5.08mm
Series 2N7000
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
200 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 25)
$ 0.54
(exc. GST)
$ 0.59
(inc. GST)
units
Per unit
Per Pack*
25 - 25
$0.54
$13.50
50 +
$0.518
$12.95
*price indicative
Packaging Options:
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