VN10KN3-G N-Channel MOSFET, 310 mA, 60 (Minimum) V VN10K, 3-Pin TO-92 Microchip Technology

  • RS Stock No. 177-9706
  • Mfr. Part No. VN10KN3-G
  • Manufacturer Microchip
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 5ohms at a gate-source voltage of 10V. It has a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has continuous drain current of 310mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this transistor are 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) transistor that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers
• Converters
• Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
• Motor controls
• Power supply circuits
• Switches

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 310 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 7.5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage 30 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.06mm
Maximum Operating Temperature +150 °C
Length 5.08mm
Forward Diode Voltage 0.8V
Series VN10K
Height 5.33mm
On back order for despatch 11/03/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Bag of 1000)
$ 0.35
(exc. GST)
$ 0.39
(inc. GST)
units
Per unit
Per Bag*
1000 +
$0.35
$350.00
*price indicative
Related Products
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next ...
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next ...
Switching Voltage Regulators Motor DriversDC-DC Converters High-speed switching ...
Description:
Switching Voltage Regulators Motor DriversDC-DC Converters High-speed switching Small gate charge: QSW = 55 nC (typ.)Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.)Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)Enhancement mode: Vth = 2.0 to 4.0 ...
Automotive Motor DriversDC-DC Converters Switching Voltage Regulators Low ...
Description:
Automotive Motor DriversDC-DC Converters Switching Voltage Regulators Low drain-source on-resistance: RDS(ON) = 64 mΩ (typ.) (VGS = 10 V)Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 ...