RS Components
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Dual N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243AA Microchip DN2540N8-G

This image is representative of the product range

On back order for despatch 23/02/2021, delivery within 7 working days from despatch date.
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Price (ex. GST) Each (On a Reel of 2000)


(exc. GST)


(inc. GST)



RS Stock No.:
Mfr. Part No.:
COO (Country of Origin):
unitsPer unitPer Reel*
2000 +$0.84$1,680.00
*price indicative

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Additional Features:
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage

Channel TypeN
Maximum Continuous Drain Current170 mA
Maximum Drain Source Voltage400 V
Package TypeTO-243AA
Mounting TypeSurface Mount
Pin Count3
Maximum Drain Source Resistance25 Ω
Channel ModeDepletion
Maximum Power Dissipation1.6 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage20 V
Number of Elements per Chip2
Forward Diode Voltage1.8V
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C