FFSP0865A SiC SiC Power Module, 2+Tab-Pin TO-220 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding

Specifications
Attribute Value
Package Type TO-220
Mounting Type Through Hole
Pin Count 2 + Tab
Maximum Power Dissipation 98 W
Transistor Configuration Single
Number of Elements per Chip 1
Transistor Material SiC
Forward Diode Voltage 2.4V
Height 16.51mm
Length 10.67mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
Width 4.8mm
790 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 5)
$ 4.95
(exc. GST)
$ 5.45
(inc. GST)
units
Per unit
Per Pack*
5 - 45
$4.95
$24.75
50 - 95
$4.66
$23.30
100 - 195
$4.408
$22.04
200 - 395
$4.188
$20.94
400 +
$4.07
$20.35
*price indicative
Packaging Options:
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