FFSP1665A SiC MOSFET, 2+Tab-Pin TO-220-2L ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding

Specifications
Attribute Value
Package Type TO-220-2L
Mounting Type Through Hole
Pin Count 2 + Tab
Maximum Power Dissipation 150 W
Transistor Configuration Single
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.67mm
Transistor Material SiC
Forward Diode Voltage 2.4V
Height 15.21mm
Length 10.36mm
Maximum Operating Temperature +175 °C
800 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Tube of 800)
$ 6.22
(exc. GST)
$ 6.84
(inc. GST)
units
Per unit
Per Tube*
800 +
$6.22
$4,976.00
*price indicative
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