FFSP2065A SiC MOSFET, 2+Tab-Pin TO-220 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

ON Semiconductor SiC Schottky Diodes

This range of Silicon Carbide (SiC) Schottky Diodes from ON Semiconductor use a completely new technology providing superior switching performance as well as higher reliability to silicon. No reverse recovery current and temperature independent switching characteristics along with excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include the highest efficiency, even faster operating frequency, greater power density and reduced EMI topped off with reduced system size and overall cost.

Features & Benefits

• Max Junction Temperature 175 °C
• High Surge Current Capacity
• Positive Temperature Coefficient
• No Reverse Recovery / No Forward Recovery
• Suitable for applications such as PFC, Industrial Power, Solar, EV Charger, UPS and Welding

Specifications
Attribute Value
Package Type TO-220
Mounting Type Through Hole
Pin Count 2 + Tab
Maximum Power Dissipation 187 W
Transistor Configuration Single
Number of Elements per Chip 1
Transistor Material SiC
Width 4.67mm
Minimum Operating Temperature -55 °C
Forward Diode Voltage 2.4V
Length 10.36mm
Maximum Operating Temperature +175 °C
Height 15.21mm
On back order for despatch 20/10/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (In a Tube of 800)
$ 8.11
(exc. GST)
$ 8.92
(inc. GST)
units
Per unit
Per Tube*
800 +
$8.11
$6,488.00
*price indicative
Related Products
NCP1117 and NCV1117 Series LDO Regulators, ON Semiconductor ...
Description:
NCP1117 and NCV1117 Series LDO Regulators, ON Semiconductor The NCP1117 and NCV1117 series of LDO positive fixed and adjustable voltage regulators have an output current in excess of 1A Available in either SOT-223 or DPAK packages, they also come in ...
N-channel MOSFETs 40 V - 60 V, Logic- ...
Description:
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio They are ...
Silicon Carbide (SiC) Schottky Diodes use a completely ...
Description:
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of ...
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky ...
Description:
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon The diode has many advanced features like temperature independent switching characteristics ...