FFSP2065A SiC MOSFET, 2+Tab-Pin TO-220 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding

Specifications
Attribute Value
Package Type TO-220
Mounting Type Through Hole
Pin Count 2 + Tab
Transistor Configuration Single
Maximum Power Dissipation 187 W
Height 15.21mm
Minimum Operating Temperature -55 °C
Width 4.67mm
Transistor Material SiC
Forward Diode Voltage 2.4V
Length 10.36mm
Maximum Operating Temperature +175 °C
Number of Elements per Chip 1
800 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 800)
$ 22.159
(exc. GST)
$ 24.375
(inc. GST)
units
Per unit
Per Tube*
800 +
$22.159
$17,727.20
*price indicative
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