Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN onsemi NVMFD5C650NLWFT1G
- RS Stock No.:
- 172-3345
- Mfr. Part No.:
- NVMFD5C650NLWFT1G
- Brand:
- onsemi
On back order for despatch 23/05/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Pack of 10)
$6.315
(exc. GST)
$6.947
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 370 | $6.315 | $63.15 |
| 380 - 740 | $6.155 | $61.55 |
| 750 + | $6.061 | $60.61 |
| *price indicative | ||
- RS Stock No.:
- 172-3345
- Mfr. Part No.:
- NVMFD5C650NLWFT1G
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 111 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DFN |
| Series | NVMFD5C650NL |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 125 W |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Width | 5.1mm |
| Length | 6.1mm |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Automotive Standard | AEC-Q101 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 1.05mm |