N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 Nexperia BSH111BKR
- RS Stock No.:
- 170-5339
- Mfr. Part No.:
- BSH111BKR
- Brand:
- Nexperia
1200 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 100)
$0.122
(exc. GST)
$0.134
(inc. GST)
| Units | Per unit | Per Pack* |
| 100 - 700 | $0.122 | $12.20 |
| 800 - 1400 | $0.12 | $12.00 |
| 1500 + | $0.118 | $11.80 |
| *price indicative | ||
- RS Stock No.:
- 170-5339
- Mfr. Part No.:
- BSH111BKR
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 335 mA |
| Maximum Drain Source Voltage | 55 V |
| Series | BSH111BK |
| Package Type | TO-236 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.3V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 1.45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 10 V |
| Width | 1.4mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 0.5 nC @ 4.5 V |
| Length | 3mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
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