2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): GB
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 5 Ω
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-92
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Category Small Signal
Maximum Power Dissipation 400 mW
Transistor Material Si
Length 5.2mm
Number of Elements per Chip 1
Dimensions 5.2 x 4.19 x 5.33mm
Width 4.19mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Height 5.33mm
Typical Input Capacitance @ Vds 20 pF@ 25 V
20000 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 10000)
$ 0.115
(exc. GST)
$ 0.127
(inc. GST)
units
Per unit
Per Reel*
10000 +
$0.115
$1,150.00
*price indicative
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