N-Channel MOSFET, 270 A, 40 V, 9 + Tab-Pin L8 Infineon IRF7739L1TRPBF

RS Stock No.:: 168-5964
Mfr. Part No.:: IRF7739L1TRPBF
Brand:: Infineon

N-Channel MOSFET, 270 A, 40 V, 9 + Tab-Pin L8 Infineon IRF7739L1TRPBF

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View all MOSFETs

Discontinued product

RS Stock No.:: 168-5964
Mfr. Part No.:: IRF7739L1TRPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	270 A
Maximum Drain Source Voltage	40 V
Series	DirectFET, HEXFET
Package Type	L8
Mounting Type	Surface Mount
Pin Count	9 + Tab
Maximum Drain Source Resistance	1 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	220 nC @ 10 V
Length	9.15mm
Number of Elements per Chip	1
Width	7.1mm
Maximum Operating Temperature	+175 °C
Height	0.57mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.3V