CSD18536KTTT N-Channel MOSFET, 349 A, 60 V NexFET, 3-Pin D2PAK Texas Instruments

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Attribute Value
Channel Type N
Maximum Continuous Drain Current 349 A
Maximum Drain Source Voltage 60 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 2.2 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.2V
Minimum Gate Threshold Voltage 1.4V
Maximum Power Dissipation 375 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Width 11.33mm
Height 4.83mm
Typical Gate Charge @ Vgs 230 nC
Minimum Operating Temperature -55 °C
Length 10.67mm
Maximum Operating Temperature +175 °C
Series NexFET
Forward Diode Voltage 1V
Price (ex. GST) Each (In a Tube of 50)
$ 7.40
(exc. GST)
$ 8.14
(inc. GST)
Per unit
Per Tube*
50 +
*price indicative
Due to temporarily constrained supply, RS is unable to accept backorders at this time