N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXYS IXFH69N30P
- RS Stock No.:
- 168-4472
- Mfr. Part No.:
- IXFH69N30P
- Brand:
- IXYS
On back order for despatch 17/02/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (In a Tube of 30)
$14.987
(exc. GST)
$16.486
(inc. GST)
| Units | Per unit | Per Tube* |
| 30 - 120 | $14.987 | $449.61 |
| 150 + | $13.488 | $404.64 |
| *price indicative | ||
- RS Stock No.:
- 168-4472
- Mfr. Part No.:
- IXFH69N30P
- Brand:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 69 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 49 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 5.3mm |
| Length | 16.26mm |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Transistor Material | Si |
| Series | HiperFET, Polar |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |