N-Channel MOSFET, 94 A, 30 V, 3-Pin DPAK onsemi FDD8896
- RS Stock No.:
- 166-1794
- Mfr. Part No.:
- FDD8896
- Brand:
- onsemi
On back order for despatch 03/07/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 2500)
$0.676
(exc. GST)
$0.744
(inc. GST)
| Units | Per unit | Per Reel* |
| 2500 - 2500 | $0.676 | $1,690.00 |
| 5000 - 7500 | $0.659 | $1,647.50 |
| 10000 + | $0.649 | $1,622.50 |
| *price indicative | ||
- RS Stock No.:
- 166-1794
- Mfr. Part No.:
- FDD8896
- Brand:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Automotive N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 94 A |
| Maximum Drain Source Voltage | 30 V |
| Series | PowerTrench |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 80 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 6.22mm |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 2.39mm |