N-Channel MOSFET, 375 A, 60 V DirectFET ISOMETRIC Infineon IRF7749L1TRPBF
- RS Stock No.:
- 165-8086
- Mfr. Part No.:
- IRF7749L1TRPBF
- Brand:
- Infineon
On back order for despatch 09/05/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 4000)
$3.899
(exc. GST)
$4.289
(inc. GST)
| Units | Per unit | Per Reel* |
| 4000 - 16000 | $3.899 | $15,596.00 |
| 20000 + | $3.509 | $14,036.00 |
| *price indicative | ||
- RS Stock No.:
- 165-8086
- Mfr. Part No.:
- IRF7749L1TRPBF
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 375 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DirectFET ISOMETRIC |
| Series | DirectFET, HEXFET |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 1.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 9.15mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 7.1mm |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 0.49mm |