N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IRFR4105ZPBF

RS Stock No.:: 165-7558
Mfr. Part No.:: IRFR4105ZPBF
Brand:: Infineon

N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IRFR4105ZPBF

This image is representative of the product range

On back order for despatch 09/05/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 75)

$1.29

(exc. GST)

$1.42

(inc. GST)

Units	Per unit	Per Tube*
75 - 300	$1.29	$96.75
375 +	$1.161	$87.075
*price indicative

RS Stock No.:: 165-7558
Mfr. Part No.:: IRFR4105ZPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	55 V
Package Type	DPAK (TO-252)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	24.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	48 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	18 nC @ 10 V
Transistor Material	Si
Length	6.73mm
Width	6.22mm
Minimum Operating Temperature	-55 °C
Height	2.39mm