N-Channel MOSFET, 13.4 A, 25 V, 8-Pin PowerPAK SO Vishay SIR412DP-T1-GE3

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Discontinued product

Technical data sheets

MOSFET Transistors, Vishay Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	13.4 A
Maximum Drain Source Voltage	25 V
Package Type	PowerPAK SO
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	15 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	15.6 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	6.25mm
Transistor Material	Si
Typical Gate Charge @ Vgs	10.7 nC @ 10 V
Width	5.26mm
Height	1.12mm
Minimum Operating Temperature	-55 °C