P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK Infineon AUIRFR5410

RS Stock No.:: 165-6696
Mfr. Part No.:: AUIRFR5410
Brand:: Infineon

P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK Infineon AUIRFR5410

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Discontinued product

RS Stock No.:: 165-6696
Mfr. Part No.:: AUIRFR5410
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

Automotive P-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	13 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	210 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	66 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	6.22mm
Length	6.73mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	58 nC @ 10 V
Minimum Operating Temperature	-55 °C
Series	HEXFET
Height	2.39mm