BSO612CVGHUMA1 N/P-Channel MOSFET, 2 A, 3 A, 60 V SIPMOS, 8-Pin DSO Infineon

  • RS Stock No. 165-5829
  • Mfr. Part No. BSO612CVGHUMA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon SIPMOS® N&P-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N, P
Maximum Continuous Drain Current 2 A, 3 A
Maximum Drain Source Voltage 60 V
Package Type DSO
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 120 mΩ, 300 mΩ
Channel Mode Enhancement
Maximum Power Dissipation 2 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 1.45mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 10.3 nC @ 10 V, 10.5 nC @ 10 V
Width 4mm
Length 5mm
Maximum Operating Temperature +150 °C
Series SIPMOS
Transistor Material Si
On back order for despatch 23/12/2020, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 2500)
$ 0.63
(exc. GST)
$ 0.69
(inc. GST)
units
Per unit
Per Reel*
2500 +
$0.63
$1,575.00
*price indicative
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