P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 Infineon BSP322PH6327XTSA1

RS Stock No.:: 165-5812
Mfr. Part No.:: BSP322PH6327XTSA1
Brand:: Infineon

P-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-223 Infineon BSP322PH6327XTSA1

This image is representative of the product range

On back order for despatch 12/06/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 1000)

$0.631

(exc. GST)

$0.694

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$0.631	$631.00
5000 +	$0.567	$567.00
*price indicative

RS Stock No.:: 165-5812
Mfr. Part No.:: BSP322PH6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1 A
Maximum Drain Source Voltage	100 V
Package Type	SOT-223
Series	SIPMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	800 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	3.5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	12.4 nC @ 10 V
Length	6.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm