N-Channel MOSFET, 170 mA, 400 V, 3-Pin SOT-223 Infineon BSP324H6327XTSA1

RS Stock No.:: 165-5810
Mfr. Part No.:: BSP324H6327XTSA1
Brand:: Infineon

N-Channel MOSFET, 170 mA, 400 V, 3-Pin SOT-223 Infineon BSP324H6327XTSA1

This image is representative of the product range

5000 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (On a Reel of 1000)

$0.568

(exc. GST)

$0.625

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$0.568	$568.00
5000 +	$0.512	$512.00
*price indicative

RS Stock No.:: 165-5810
Mfr. Part No.:: BSP324H6327XTSA1
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon SIPMOS® N-Channel MOSFETs

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	170 mA
Maximum Drain Source Voltage	400 V
Package Type	SOT-223
Series	SIPMOS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	25 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Minimum Gate Threshold Voltage	1.3V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	3.5mm
Length	6.5mm
Typical Gate Charge @ Vgs	4.54 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.6mm