CSD19536KTTT N-Channel MOSFET, 272 A, 100 V NexFET, 3-Pin D2PAK Texas Instruments

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 272 A
Maximum Drain Source Voltage 100 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 2.8 mΩ
Channel Mode Enhancement
Maximum Power Dissipation 375 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +175 °C
Series NexFET
Height 4.83mm
Length 10.67mm
Typical Gate Charge @ Vgs 118 nC @ 0 V
Width 9.65mm
Minimum Operating Temperature -55 °C
Transistor Material Si
Forward Diode Voltage 1.1V
Price (ex. GST) Each (On a Reel of 50)
$ 7.71
(exc. GST)
$ 8.48
(inc. GST)
units
Per unit
Per Reel*
50 +
$7.71
$385.50
*price indicative
Due to temporarily constrained supply, RS is unable to accept backorders at this time