IRF1010EZSTRLP N-Channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK Infineon

  • RS Stock No. 162-3279
  • Mfr. Part No. IRF1010EZSTRLP
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 84 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 8.5 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage ±20 V
Package Type D2PAK
Mounting Type Surface Mount
Pin Count 2 + Tab
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 140 W
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Typical Turn-On Delay Time 19 ns
Width 9.65mm
Typical Turn-Off Delay Time 38 ns
Typical Gate Charge @ Vgs 58 nC @ 10 V
Height 4.83mm
Series IRF1010EZS
Typical Input Capacitance @ Vds 2810 pF @ 25 V
Maximum Operating Temperature +175 °C
Forward Transconductance 200S
Length 10.67mm
Forward Diode Voltage 1.3V
Dimensions 10.67 x 9.65 x 4.83mm
On back order for despatch 23/10/2019, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 3200)
$ 1.029
(exc. GST)
$ 1.132
(inc. GST)
units
Per unit
Per Reel*
3200 - 3200
$1.029
$3,292.80
6400 - 6400
$0.929
$2,972.80
9600 +
$0.847
$2,710.40
*price indicative
Related Products
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next ...
An extension to the Infineon StrongIRFET family optimised ...
Description:
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational ...
Automotive Power MOSFET in a 5x6mm flat lead ...
Description:
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications. Low RDS(on)Minimize Conduction LossesLow QG and ...
Complex type MOSFETs(N+N) are made as low ON-resistance ...
Description:
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. 4V-drive typeNch Middle-power MOSFETFast ...