IRF1010EZSTRLP N-Channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK Infineon

  • RS Stock No. 162-3279
  • Mfr. Part No. IRF1010EZSTRLP
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 84 A
Maximum Drain Source Voltage 60 V
Package Type D2PAK
Mounting Type Surface Mount
Pin Count 2 + Tab
Maximum Drain Source Resistance 8.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 140 W
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 9.65mm
Maximum Operating Temperature +175 °C
Length 10.67mm
Forward Diode Voltage 1.3V
Series IRF1010EZS
Height 4.83mm
Typical Gate Charge @ Vgs 58 nC @ 10 V
2400 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (On a Reel of 800)
$ 3.92
(exc. GST)
$ 4.31
(inc. GST)
units
Per unit
Per Reel*
800 - 800
$3.92
$3,136.00
1600 - 1600
$3.541
$2,832.80
2400 +
$3.228
$2,582.40
*price indicative
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