- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Brand:
- Vishay
375 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 25)
$4.026
(exc. GST)
$4.429
(inc. GST)
Units | Per unit | Per Tube* |
25 - 25 | $4.026 | $100.65 |
50 - 75 | $3.955 | $98.875 |
100 + | $3.883 | $97.075 |
*price indicative |
- RS Stock No.:
- 159-6516
- Mfr. Part No.:
- IRFP460BPBF
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
Vishay D Series Power MOSFETs
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 500 V |
Series | D Series |
Package Type | TO-247AC |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 250 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 278 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Length | 15.87mm |
Maximum Operating Temperature | +150 °C |
Width | 5.31mm |
Typical Gate Charge @ Vgs | 85 nC @ 10 V |
Number of Elements per Chip | 1 |
Height | 20.82mm |
Minimum Operating Temperature | -55 °C |
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