- RS Stock No.:
- 151-3071
- Mfr. Part No.:
- PMPB215ENEAX
- Brand:
- Nexperia
On back order for despatch 09/05/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 3000)
$0.258
(exc. GST)
$0.284
(inc. GST)
Units | Per unit | Per Reel* |
3000 - 3000 | $0.258 | $774.00 |
6000 - 9000 | $0.253 | $759.00 |
12000 + | $0.248 | $744.00 |
*price indicative |
- RS Stock No.:
- 151-3071
- Mfr. Part No.:
- PMPB215ENEAX
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.8 A |
Maximum Drain Source Voltage | 80 V |
Package Type | DFN2020 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 445 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.7V |
Minimum Gate Threshold Voltage | 1.3V |
Maximum Power Dissipation | 15.6 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Width | 2.1mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 2.1mm |
Typical Gate Charge @ Vgs | 4.8 nC @ 10 V |
Minimum Operating Temperature | -55 °C |
Automotive Standard | AEC-Q101 |
Height | 0.65mm |